Footnotes

[a] for a recent review, see [6]. [reference in text]

References

[1]H. Morkoç: "Nitride Semiconductors and Devices", Springer, ISBN 3-540-64038-x, (1999) [text citation]

[2] M. Asif Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson , Appl. Phys. Lett. 63, 1214-1215 (1993). [text citation]

[3] S. Nakamura, T. Mukai, M. Senoh, J. Appl. Phys. 76, 8189 (1994). [text citation]

[4] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35, L217-L220 (1996). [text citation]

[5] G. Y. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoc, G. Smith, M. Estes, B. Goldberg, W. Yank, S. Krishnankutty:, Appl. Phys. Lett. 71, 2154 (1997). [text citation]

[6]Hadis Morkoç, Aldo Di Carlo and R. Cingolani, "GaN-Based Modulation Doped FETs and UV Detectors", Condensed Matter News, Ed. Patrick Bernier, in press [text citation]

[7] S. N. Mohammad, H. Morkoç, Prog. Quantum Electron. PQE20, 361-525 (1996). [text citation]

[8] H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns , J. Appl. Phys. 76, 1363-1398 (1994). [text citation]

[9] M. Seelmann-Eggebert, H. Zimmermann, H. Obloh, R. Niebuhr, B. Wachtendorf, Mater. Res. Soc. Symp. Proc. 468, 193 (1997). [text citation]

[10] A. Botchkarev, A. Salvador, B. Sverdlov, J. Myoung, H. Morkoc , J. Appl. Phys. 77, 4455-4458 (1995). [text citation]

[11]H. Morkoç, unpublished [text citation]


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