MIJ-NSR Vol. 5, Art. 5, K. Lorenz et al.

Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

This article was received on Thursday, March 16, 2000 and accepted on Monday, May 22, 2000.

Abstract

The annealing of implantation induced lattice damage in AlN, GaN and InN was studied by means of the perturbed angular correlation (PAC) technique using the PAC probe ¹⁸¹Hf(¹⁸¹Ta). In all three lattices substantial fractions of the probe atoms occupied substitutional lattice sites after annealing. A detailed investigation of the changes observed during isochronal annealing indicates differences in the recovery process. In GaN the trapping of a unique defect, possibly a Nitrogen vacancy, in an intermediate temperature range was found.

Outline

Introduction

Experimental Details

Results and Discussion

GaN

InN

AlN

Conclusions

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5, 5(2000).

last updated Saturday, June 10, 2000 1:42:13 AM.