Tables

Table 1

Sample parameters obtained from XRD (x), NIRSE (dNIR) and IRSE (dIR) investigations. The error bars for all thicknesses amount to 10%, and correspond to 90% reliability.

sample

x[%]

dIR[nm]

dNIR[nm]

GaNAs016

0.9

7.7

7.5

GaNAs014

1.3

8.4

7.7

GaNAs019

3.3

5.0

5.1


Table 2

Best-fit parameters for GaNxAs1-x (0 <= x <= 3.3%; See text for further details).

sample

x[%]

n [cm-3]x1018

omegaTO2 [cm-1]

Gamma [cm-1]

f x10-4

GaNAs016

0.9

1

470.0

11

39

GaNAs014

1.3

1.6

470.7

13

56

GaNAs019

3.3

7.9

470.9

18

143


top        main text        figures        endnotes


last updated Friday, April 21, 2000 2:55:04 AM.

© 2000 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research