Figures

Figure 1

GaN (3 x 3) RHEED pattern observed with the electron beam along the [2 0] direction.

Figure 2

Room temperature mobility for different thickness of intermediate-temperature buffer layer.

Figure 3

Typical room temperature photoluminescence spectra of GaN (a) grown without an intermediate-temperature buffer layer (ITBL) and (b) grown in presence of a 800-nm-thick ITBL.

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