GaN, InN and AlN (a) etch rates and (b) GaN:AlN and GaN:InN etch selectivities as a function of dc bias in a Cl2/Ar ICP plasma. Plasma conditions were: 25 sccm Cl2, 5 sccm Ar, 2 mTorr chamber pressure, 500 W ICP-source power and 25°C cathode temperature.
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