Figure 7

SEM micrographs for GaN etched at (a) -50, (b) -150 and (c) -300 V dc bias. ICP etch conditions were 32 sccm Cl₂, 8 sccm BCl₃, 5 sccm Ar, 500 W ICP source power, 2 mTorr pressure and 10°C electrode temperature.

(click for full image)

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