Figure 27

I-V characteristics from GaN diodes before and after N₂ plasma exposure (500 W source power, 150 W rf chuck power, 5 mTorr) and subsequent annealing either prior (top) or subsequent (center) to the deposition of the Schottky metallization. The variation of V_B in the samples annealed prior to metal deposition is shown at the bottom of the figure.

top        text     Figure 26     Figure 28        endnotes

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