AES surface scans of GaN (a) before exposure to the plasma, (b) at 65 W (-120 V bias) and (c) 275 W rf-cathode power (-325 V bias), 1 mTorr, 170°C, and 850 W microwave power in an ECR-generated Cl2/H2 discharge.
top text Figure 21 Figure 23 endnotes
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