Figure 10

GaN and InN etch rates as a function of temperature for an ICP-generated Cl2/H2/Ar plasmas. ICP etch conditions were 22.5 sccm Cl2, 2.5 sccm H2, 5 sccm Ar, 500 W ICP source power, -250 V dc bias and 2 mTorr pressure. 

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last updated Wednesday, November 22, 2000 3:01:08 PM.

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