[1] Stephen J. Pearton, GaN and Related Materials (Gordon and Breach Science Publishers, Amsterdam, 1997) . [text citation]
[2] J.I. Pankove, T.D. Moustaka, Gallium Nitride I (Academic Press, San Diego, 1997) . [text citation]
[3]H. Morkoc, Wide Band Gap Nitrides and Devices (Springer, Berlin, 1998) [text citation]
[4] Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode - GaN based Light Emitters and Lasers (Springer-Verlag, Heidelberg, 1997) . [text citation]
[5]S.J. Pearton and R.J. Shul,"Dry Etching" in Gallium Nitride I, edited by J.I. Pankove and T.D. Moustakas (Academic, San Diego, 1998) [text citation]
[6]I. Adesida, "Etching of GaN and Related Compounds," in Properties, Processing and Applications of GaN and Related Semiconductors, ed. J. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel, EMIS Data Review No. 23 (INSPEC, IEE, London 1999) [text citation]
[7] R. J. Shul, G. B. McClellan, S. J. Pearton, C. R. Abernathy, C. Constantine, C. Barratt, Electron. Lett. 32, 1408 (1996). [text citation]
[8]R.J. Shul, "ICP Etching of III-Nitrides," in GaN and Related Materials II, edited by S.J. Pearton (Gordon and Breach, New York 1998) [text citation]
[9] H. P. Gillis, D. A. Choutov, K. P. Martin, L. Song, Appl. Phys. Lett. 68, 2255 (1996). [text citation]
[10] F. Ren, S. J. Pearton, R. J. Shul, J. Han, J. Electron. Mater. 27, 175 (1998). [text citation]
[11] C. R. Eddy, Jr, B. Molnar, J. Electron. Mater. 28, 314 (1999). [text citation]
[12] R.J. Shul, R.D. Briggs, J. Han, S.J. Pearton, J.W. Lee, C.B. Vartuli, K.P. Killeen, M.J. Ludowise, Mater. Res. Soc. Symp. Proc. 468, 355 (1997). [text citation]
[13] J. I. Pankove, M. Leksono, S. S. Chang, C. Walker, B. Van Zeghbroeck, MRS Internet J. Nitride Semicond. Res. 1, 39 (1996). [text citation]
[14] L. S. McCarthy, P. Kozodoy, S. P. DenBaars, M. Rodwell, U. K. Mishra, IEEE Electron Dev. Lett. EDL-20, 277 (1999). [text citation]
[15] Fan Ren , Cammy R. Abernathy , J. M. Van Hove, P. P. Chow, R. Hickman, J. J. Klaassen, R. F. Kopf, Hyun Cho, K. B. Jung, J. R. La Roche, R. G. Wilson, J. Han, R. J. Shul, A. G. Baca, S.J. Pearton, MRS Internet J. Nitride Semicond. Res. 3, 41 (1998). [text citation]
© 2000 The Materials Research Society