Discussion of Article 11 in Volume 5

This is a discussion of the MIJ-NSR article entitled A Review of Dry Etching of GaN and Related Materials by S.J. Pearton, R. J. Shul, Fan Ren

Comments on this paper by the reviewer(s):

Reviewer 1: The authors reviewed dry etching properties and its application to device processing for III-nitride materials. Since, to the best of my knowledge, this paper is believed to be the first comprehensive review paper for dry etching of GaN-based semiconductors, the paper should be accepted for Nitride Internet Journal of MRS. The authors well summarized the the various dry etching characteristics and the application to the electronic and photonic devices.

This discussion is moderated by S.J. Pearton.

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