Figures

Figure 1

AFM image and RHEED pattern after one-hour nitridation at 100 °C [(a) and (b)].

Figure 2

AFM image and RHEED pattern after one-hour nitridation at 200 °C [(a) and (b)].

Figure 3

AFM image and RHEED pattern after one-hour nitridation at 700 °C [(a) and (b)].

Figure 4

Surface roughness after one-hour nitridation and GaN bulk growth as a function of temperature.

Figure 5

FWHM of the X-ray rocking curves for the symmetric and asymmetric reflections of 0.9µm-GaN bulk.

Figure 6

AFM images after the 0.9µm-GaN bulk growth at (a) 100°C, (b) 200°C for one-hour nitridation.

Figure 7

AFM images after the 0.9µm-GaN bulk growth at (a) 300°C, (b) 400°C for one-hour nitridation.

Figure 8

AFM image after the 0.9µm-GaN bulk growth at 700°C for one-hour nitridation.

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© 2000 The Materials Research Society