Discussion of Article 10 in Volume 5

This is a discussion of the MIJ-NSR article entitled Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE by Gon Namkoong, W. Alan Doolittle, Sangbeom Kang, Huang Sa, April S. Brown, Stuart R. Stock

Description of the paper by the reviewer(s):

Reviewer 1: This paper describes the effects of substrate nitridation temperature (100-700C) on the structural quality of GaN films grown by plasma assisted molecular beam epitaxy on sapphire substrates. The symmetric and asymmetric XRD-FWHM reduced with lowering the nitridation temperature. The 100C nitridation resulted in an increase of grain size of GaN film.

This discussion is moderated by gonnamkoong.

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