Figures

Figure 1

Average strain profiles across the active region of samples 1 through 4. Also shown is the indium fraction that corresponds to the c-strain. Light emission energies are indicated [8].

Figure 2

Standard deviation of the c-strain in InGaN layers with various indium fractions. Also shown are the indium fraction fluctuations that correspond to the c-strain fluctuations. The detection limit is the standard deviation of the c-strain in the surrounding GaN matrix.

Figure 3

Energies of photoluminescence (PL) peaks of samples 1 through 4 are plotted as a function of excitation power at 300 K.

Figure 4

Energy of electroluminescence (EL) peak for a Nichia green LED (sample 1) as a function of temperature and current. The lines show the results of calculations using the Bandtails model.

© 2000 The Materials Research Society