The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
N. A. Shapiro
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720
and
University of California at Berkeley, Department of Materials Science and Mineral Engineering
Piotr Perlin
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720
and
University of California at Berkeley, Department of Materials Science and Mineral Engineering
and
High Pressure Research Center
Christian Kisielowski
NCEM, Lawrence Berkeley Laboratory
L. S. Mattos
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720
and
University of California at Berkeley, Department of Materials Science and Mineral Engineering
J. W. Yang
APA Optics Inc.
Eicke R. Weber
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720
and
University of California at Berkeley, Department of Materials Science and Mineral Engineering
This article was received on Monday, December 13, 1999 and
accepted on Tuesday, February 1, 2000. Abstract
A
correlation of the local indium concentration measured on an atomic scale with
luminescence properties of InxGa1-xN quantum wells
reveals two different types of recombination mechanisms. A piezoelectric-field
based mechanism is shown to dominate in samples with thick wells (L > 3 nm)
of low indium concentration (x < 0.15-0.20). Spatial indium concentration
fluctuations dominate luminescence properties in samples of higher indium
concentrations in thinner wells. Quantum confinement is shown to have a major
effect on the radiative recombination energy. A model is presented that relates
the experimentally measured nano scale structural and chemical properties of
quantum wells to the characteristics of the luminescence.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5, 1(2000).
last updated Thursday, February 10, 2000 11:34:29 AM.© 2000 The Materials Research Society
