| B. Monemar, Editor in Chief | C. R. Abernathy, Associate Editor in Chief | K. Hiramatsu, Associate Editor in Chief |
Published 2000. A keyword index and an author index are also available.
1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
N. A. Shapiro, Piotr Perlin , Christian Kisielowski, L. S. Mattos, J. W. Yang, Eicke R. Weber .
2. Current limitation after pinch-off in AlGaN/GaN FETs
R. Dietrich, A. Wieszt, A. Vescan, H. Leier, Joan M. Redwing, Karim S. Boutros, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke.
3. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
J. Sik, M. Schubert, T. Hofmann, V. Gottschalch.
4. Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
Michael E. Bartram.
5. Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy , J.M. Zavada.
6. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
J.D. Brown, J. Boney, J. Matthews, P. Srinivasan, J.F. Schetzina, Thomas Nohava, Wei Yang, Subash Krishnankutty.
7. Preparation of Sapphire for High Quality III-Nitride Growth
J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç.
8. Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
P. de Mierry, B. Beaumont, E. Feltin, H.P.D. Schenk, Pierre GIBART, F. Jomard, S. Rushworth, L. Smith, R. Odedra.
9. Solar-Blind AlGaN Heterostructure Photodiodes
J.D. Brown, Jizhong Li, P. Srinivasan, J. Matthews, J.F. Schetzina.
10. Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
Gon Namkoong, W. Alan Doolittle, Sangbeom Kang, Huang Sa, April S. Brown, Stuart R. Stock .
11. A Review of Dry Etching of GaN and Related Materials
S.J. Pearton, R. J. Shul, Fan Ren .
12. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
W.K. Fong, C. F. Zhu, B. H. Leung, Charles Surya .
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