last updated Saturday, April 3, 1999 2:46:06 AM.
© 1999 The Materials Research Society
E. Kaminska, A. Piotrowska
Institute of Electron Technology
J. Jasinski
Institute of Experimental Physics
J. Kozubowski
Warsaw Technical University
A. Barcz, K. Golaszewska
Institute of Electron Technology
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G9.9 (1999).
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