This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

InGaN alloys with indium compositions ranging from 0-40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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References Citing this Article

[1] W.A. Harrison, Electronic Structure and the Properties of Solids (W. H. Freeman and Company, San Francisco, 1980) .

[2] JE Northrup, J Neugebauer, Phys. Rev. B 60, 8473-8476 (1999).

[3] H Chen, RM Feenstra, JE Northrup, T Zywietz, J Neugebauer, DW Greve, J. Vac. Sci. Technol. B 18, 2284-2289 (2000).

[4] Huajie Chen, R. M. Feenstra, J. Northrup, Jörg Neugebauer, D. W. Greve, MRS Internet J. Nitride Semicond. Res. 6, 11 (2001).

[5] R. M. Feenstra, J. E. Northrup, Jörg Neugebauer, MRS Internet J. Nitride Semicond. Res. 7, 3 (2002).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G9.5 (2000).

Errata

1. August 25, 1999. In figures 4 and 5 the originally published version had black and white balls. The corrected figures also have gray balls. Original Version (78K)
2. April 25, 2002. The citation listed in bold beneath the authors' names is incorrect (it
3. leaves off the "4" in the volume number).previously published version

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