last updated Saturday, April 3, 1999 2:45:52 AM.
© 1999 The Materials Research Society
B. Daudin, F. Widmann, J. Simon, G. Feuillet, J.L. Fouviere, N.T. Pelekanos
CEA/Grenoble
G. Fishman
Universite J. Fourier-Grenoble 1-CNRS
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
It is demonstrated that GaN quantum dots with the wurtzite structure grown by molecular beam epitaxy on AlN exhibit optical properties which, depending on the size of the dots, may be dominated by piezoelectric effects. In "large" quantum dots with an average height and diameter of 4.1 and 17 nm, respectively, the photoluminescence peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap, which is assigned to a piezoelectric field of 5.5 MV/cm present in the dots. The decay time of the photoluminescence was also measured. A comparison is carried out with theoretical calculation of the radiative lifetime.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G9.2 (1999).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |