last updated Saturday, April 3, 1999 2:45:42 AM.
© 1999 The Materials Research Society
H.P. Gillis, M.B. Christopher
UCLA
K.P. Martin
Georgia Tech
D.A. Choutov
Georgia Tech and National Semiconductor
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the III-N materials.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G8.2 (1999).
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