last updated Saturday, April 3, 1999 2:45:32 AM.
© 1999 The Materials Research Society
M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald
Boston University
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generation-recombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G7.8 (1999).
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