last updated Saturday, April 3, 1999 2:45:26 AM.
© 1999 The Materials Research Society
Jung Han, M.H. Crawford, R.J. Shul, S.J. Hearne, E. Chason, J.J. Figiel, M. Banas
Sandia National Laboratories
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G7.7 (1999).
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