last updated Saturday, April 3, 1999 2:45:16 AM.
© 1999 The Materials Research Society
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2 µm/min. The crystallographic GaN etch planes are {0001}, { 0 1 10 }, { 1 1 10 }, { 2 1 10 }, and { 3 1 10 }. The vertical { 0 1 10 } planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G7.5 (1999).
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