last updated Saturday, April 3, 1999 2:45:11 AM.
© 1999 The Materials Research Society
T.A. Kennedy, E.R. Glaser, W.E. Carlos
Naval Research Laboratory
P.P. Ruden
University of Minnesota
Shuji Nakamura
Nichia Chemical Industries, Ltd.
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The symmetry of the recombining electrons and holes in lightly photo-excited InGaN LEDs revealed through ODMR is related to the physical structure, band structure and defects present. Calculations of the electron-g within the k·p formalism give the average shift from the free-electron value for GaN but are not fully reconciled with the anisotropy. This theory is also extended to InGaN alloys for both pseudomorphic and relaxed layers. The average shift is close to the experimental values for the green LED. The strongly reduced hole anisotropies seen experimentally are explained by a recently published theory for acceptors in GaN.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G7.4 (1999).
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