This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Base transit time, _b, in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, µ_n, in the neutral base region and the effective electron velocity, S_c , at the edge of base-collector heterojunction. µ_n and S_c are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.05µm. It is also shown that non-stationary transport is not required to study _bfor neutral base width in the range of 0.05µm for GaN-based HBTs.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.7 (1999).

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