last updated Saturday, April 3, 1999 2:44:53 AM.
© 1999 The Materials Research Society
Leah Bergman, Dimitri Alexson, Robert J. Nemanich
North Carolina State University
Mitra Dutta, Michael A. Stroscio
U.S. Army Research Office
Cengiz Balkas, Robert F. Davis
North Carolina State University
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The quasi-LO and quasi-TO modes of AlN crystallite were investigated. The analysis indicates that the Raman mode behavior concurs with Loudons' model of mode-mixing in wurtzite (WZ) structure crystals which is due to the long-range electrostatic field. Phonon-lifetimes of GaN and AlN crystallites were studied via Raman lineshape. It was found that the low energy E2 mode lifetime is about an order of magnitude longer than that of the other modes, and that impurities impact significantly the phonon-lifetimes.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.65 (1999).
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