This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Results of Monte Carlo simulations of electron transport for wurtzite phase GaN in crossed, weak electric and magnetic fields are presented. It is found that the Hall factor, r_H= Hall/drift , decreases monotonically as the temperature increases from 77K to 400K. The low temperature value of the Hall factor increases significantly with increasing doping concentration. The Monte Carlo simulations take into account the electron-lattice interaction through polar opti-cal phonon scattering, deformation potential acoustic phonon scattering (treated as an inelastic process), and piezoelectric acoustic phonon scattering. Impurity scattering due to ionized and neutral donors is also included, with the latter found to be important at low temperature due to the relatively large donor binding energy which implies considerable carrier freeze-out already at liq-uid nitrogen temperature. The temperature dependences of the electron concentration, drift mobility, and Hall factor are calculated for donor concentrations equal to 5 x 10¹⁶ cm ^-3 , 10¹⁷ cm^-3 , and 5 x 10¹⁷ cm^-3 . The Monte Carlo simulations are compared to classical analytical results obtained using the relaxation-time approximation, which is found to be adequate at low tempera-tures and sufficiently low carrier concentrations so that inelastic scattering effects due to optical phonons and degeneracy effects are negligible. The influence of dislocations on the Hall factor is discussed briefly.

Full text of this article is available.

• Portable Document Format (Adobe Acrobat) Version (145K)

For information about using Adobe Acrobat files, click here .

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.6 (1999).

last updated Saturday, April 3, 1999 2:44:47 AM.
© 1999 The Materials Research Society