last updated Saturday, April 3, 1999 2:44:38 AM.
© 1999 The Materials Research Society
Shangli Wu
University of Connecticut
Richard T. Webster
Air Force Research Laboratory
A.F.M. Anwar
University of Connecticut
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson's equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.58 (1999).
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