last updated Saturday, April 3, 1999 2:44:24 AM.
© 1999 The Materials Research Society
T.J. Schmidt, S. Bidnyk, Yong-Hoon Cho, A.J. Fischer, J.J. Song
Oklahoma State University
S. Keller, U.K. Mishra, S.P. DenBaars
University of California, Santa Barbara
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.54 (1999).
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