last updated Saturday, April 3, 1999 2:44:19 AM.
© 1999 The Materials Research Society
E.V. Kalinina, V.A. Solov'ev, A.S. Zubrilov
Ioffe Institute
V.A. Dmitriev
Howard University
A.P. Kovarsky
Mekhanobr Analyt Institute
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
In this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2x1016 cm-2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.53 (1999).
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