This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by depositing NiIn on p-GaN films (p ~ 2 x 10¹⁷ cm^-3 ) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800°C for 1 min yielding the lowest resistance. When annealed at 800°C for 1 min NiIn contacts exhibited a specific contact resistance of 8-9 x 10^-3 cm² , as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard. Their measured specific contact resistance (_c = 1.2 - 2.1 x 10^-2 cm² ) was significantly higher than that of the NiIn contacts. Demonstrating that NiIn has promise as an ohmic contact to p-GaN and should be studied in greater detail.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.49 (1999).

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