-cm2 at a current density of 66.7 mA/cm). Based on the extracted rcfrom the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ~ 88% of the total series resistance of the LED. R.W. Chuang, A.Q. Zou, H.P. Lee
University of California, Irvine
Z.J. Dong, F.F. Xiong, R. Shih
Alpha Photonics Inc.
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
We report both the device fabrication and characterization of InGaN/GaN single quantum well LEDs grown on sapphire substrates using multi-wafer MOVPE reactor. To improve current spreading of the LEDs, a self-aligned process is developed to define LED mesa that is coated with a thin, semi-transparent Ni/Au (40 Å/40 Å) layer. A detailed study on the ohmic contact resistance of Ni/Cr/Au on p-GaN versus annealing temperatures is carried out on transmission line test structures. It was found that the annealing temperatures between 300 to 500°C yield the lowest specific contact resistance rc( 0.016 -cm2 at a current density of 66.7 mA/cm). Based on the extracted rcfrom the transmission line measurement, we estimate that the contact resistance of the p-type GaN accounts for ~ 88% of the total series resistance of the LED.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.42 (1999).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |
