last updated Saturday, April 3, 1999 2:43:30 AM.
© 1999 The Materials Research Society
Gabriela E. Bunea, S.T. Dunham, T.D. Moustakas
Boston University
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Static induction transistors (SITs) are short channel FET structures which are suitable for high power, high frequency and high temperature applications. GaN has particularly favorable properties for SIT operation. However, such a device has not yet been fabricated. In this paper we report simulation studies on GaN static induction transistors over a range of device structures and operating conditions. The transistor was modeled with coupled drift-diffusion and heat-flow equations. We found that the performance of the device depends sensitively on the thermal boundary conditions, as self-heating effects limit the maximum voltage swing.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.41 (1999).
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