last updated Saturday, April 3, 1999 2:43:25 AM.
© 1999 The Materials Research Society
Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren
University of Florida, Gainesville
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal·mol-1 ) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 1020 cm-3 ) in the material.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.40 (1999).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |