last updated Saturday, April 3, 1999 2:43:15 AM.
© 1999 The Materials Research Society
X.A. Cao, F. Ren
University of Florida, Gainesville
J.R. Lothian
Multiplex Inc.
S.J. Pearton, C.R. Abernathy
University of Florida, Gainesville
J.C. Zolper
Office of Naval Research
M.W. Cole
U.S. Army Research Laboratory
A. Zeitouny
Technion-Israel Institute of Technology
M. Eizenberg, R.J. Shul
Sandia National Laboratories
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Sputter-deposited W-based contacts on p-GaN (NA~1018 cm-3 ) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ~250°C as more of the acceptors become ionized. The optimum annealing temperature is ~700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ~900°C.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.39 (1999).
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