last updated Thursday, May 27, 1999 1:16:31 AM.
© 1999 The Materials Research Society
P.P. Ruden, J.D. Albrecht, A. Sutandi
University of Minnesota
S.C. Binari, K. Ikossi-Anastasiou
Naval Research Laboratory
M.G. Ancona
Naval Research Laboratoray
R.L. Henry, D.D. Koleske, A.E. Wickenden
Naval Research Laboratory
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1 m gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.35 (1999).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |