X.A. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy
University of Florida, Gainesville
J. Han, R.J. Shul, D.J. Rieger
Sandia National Laboratories
J.C. Zolper
Office of Naval Research
R.G. Wilson
Consultant, Stevenson Ranch, California
M. Fu, J.A. Sekhar
Micropyretics Heaters International, Inc.
H.J. Guo, S.J. Pennycook
Oak Ridge National Laboratory
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are 
2 x 10 -13 cm2·s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ~90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.33 (2000).
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