last updated Saturday, April 3, 1999 2:42:53 AM.
© 1999 The Materials Research Society
Seung Mi Lee, Young Hee Lee
Jeonbuk National University
Yong Gyoo Hwang
Wonkwang University
J. Elsner
Universitat GH Paderborn
Dirk Porezag
Naval Research Laboratory
Thomas Frauenheim
Universitat GH Paderborn
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
We perform parametrized density-functional calculations to predict the stability and formation mechanism of GaN nanotubes. Strain energies of GaN nanotubes are comparable to those of carbon nanotubes, suggesting the possibility for the formation of GaN nanotubes. We note that an intermediate phase with [4,6,10] polygons exist at armchair tube edge, which may play as a nucleation seed of further tube growth.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.3 (1999).
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