last updated Saturday, April 3, 1999 2:42:49 AM.
© 1999 The Materials Research Society
A. E. Yunovich, V. E. Kudryashov, A. N. Turkin
Department of Physics, M.V. Lomonosov Moscow State University
A. N. Kovalev, F. I. Manyakhin
Moscow Institute of Steel and Alloys
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Electroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.29 (1999).
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