last updated Saturday, April 3, 1999 2:42:39 AM.
© 1999 The Materials Research Society
R.A. Beach, E.C. Piquette, T.C. McGill
California Institute of Technology
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The incorporation of oxygen onto the (3x3) reconstructed surface of GaN(0001) has been studied using X-ray Photoelectron Spectroscopy (XPS). It was found that the (3x3) reconstruction corresponds to a fractional Ga adlayer atop a Ga terminated GaN surface. Our measurements indicate a surface coverage of 1.15 ± 0.2 monolayers of relaxed Ga on the surface. The binding energy separation between the relaxed surface Ga3d core level and bulk Ga3d level was measured to be 1.1 ± 0.1 eV. A metallic component extending from the bulk GaN valence band maximum out to 0 eV was also present in the XPS spectrum. The separation between the bulk valence band maximum and the Fermi level of the metallic component was found to be 2.1 ± 0.1 eV. The relaxation of the surface Ga was found to decrease with oxygen exposure indicating Ga-O bonding, with oxygen adsorption terminating at 1.3 ± 0.2 monolayers. The O1s core level was found to have a FWHM of 2.0 ± 0.1 eV.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.26 (1999).
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