M. Sumiya
Shizuoka University
T. Ohnishi
Tokyo Institute of Technology
M. Tanaka
Shizuoka University
A. Ohtomo, M. Kawasaki, M. Yoshimoto, K. Koinuma
Tokyo Institute of Technology
K. Ohtsuka
Sanken Electric Co. Ltd.
S. Fuke
Shizuoka University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2µm GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer.
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[1] R. M. Feenstra, J. E. Northrup, Jörg Neugebauer, MRS Internet J. Nitride Semicond. Res. 7, 3 (2002).
[2] M. Sumiya, S. Fuke, MRS Internet J. Nitride Semicond. Res. 9, 1 (2004).
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.23 (2000).
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