last updated Saturday, April 3, 1999 2:42:20 AM.
© 1999 The Materials Research Society
T. Honda, H. Kawanishi
Kohgakuin University
T. Sakaguchi, F. Koyama, K. Iga
Tokyo Institute of Technology
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
We have estimated the characteristic temperature T0of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.2 (1999).
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