This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Epitaxial single crystal GaN films (2.0 µm thick) were implanted 60° off the <0001> surface normal with 600 keV O⁺ ions at 190 or 210 K over a range of ion fluences from 4.8x10¹⁷ to 5.0x10²⁰ ions/m². The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a <0001> channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the <0001> axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.0x10²⁰ O⁺ /m² ) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.15 (1999).

last updated Saturday, April 3, 1999 2:42:14 AM.
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