last updated Saturday, April 3, 1999 2:42:09 AM.
© 1999 The Materials Research Society
Y.V. Zhilyaev, M.E. Kompan, E.V. Konenkova, S.D. Raevskii
Russian Academy of Sciences
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Results are presented on the photoluminescence of n-GaN (T=300 K) after surface treatment with sulfide (Na2S and (NH4)2S) solutions in water or isopropyl alcohol. It has been shown that the intensity of the n-GaN photoluminescence band is enhanced as a result of the surface treatment with alcoholic sulfide solutions, this enhancement being greater for a strongly basic Na2S solution than for a weakly basic (NH4)2S solution.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.14 (1999).
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