last updated Saturday, April 3, 1999 2:41:55 AM.
© 1999 The Materials Research Society
Sukit Limpijumnong, Sergey N. Rashkeev, Walter R.L. Lambrecht
Case Western Reserve University
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The electronic band structure, structural and bonding, and some linear and nonlinear optical properties are calculated for a new ternary nitride compound ZnGeN2 using first-principles methods. Good agreement is obtained with crystallographic data and with absorption data on the band gap. The prospects for use as nonlinear optical material are discussed.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.11 (1999).
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