last updated Saturday, April 3, 1999 2:41:50 AM.
© 1999 The Materials Research Society
M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinski, G.D. Watkins
Lehigh University
S.J. Pearton
University of Florida, Gainesville
R.G. Wilson
Consultant, Stevenson Ranch, California
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Vibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Si-doped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm-1 in GaN that had been implanted with protons. These frequencies are close to those predicted for VGa-Hn complexes, leading to the tentative assignment of the new lines to VGa defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LE1, both of which were seen previously for electron-irradiated GaN.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G5.9 (1999).
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