This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 10¹⁶ cm^-3 to 10²⁰ cm^-3 . The incorporation of carbon leads to a reduc-tion of the background electron concentration by one order of magnitude but the material remains n-type. For high carbon concentrations a re-increase of the carrier concentration is observed which is related to selfcompensation. Investigations of the donor-acceptor-pair luminescence show that doping with carbon is accompanied by the generation of a new donor exhibiting a thermal activation energy of about 55 meV. Layers grown by atomic layer epitaxy are marked by an increased intensity of the donor-acceptor-pair band luminescence which is attributed to the enforced incorporation of carbon onto the nitrogen sublattice. The yellow luminescence is found to be a typical feature of all carbon doped layers in contrast to nominally undoped samples.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G5.6 (1999).

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