MIJ-NSR Vol. 4S1, Art. G4.9, K.J. Linthicum et al.

Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith
North Carolina State University

T.S. Zheleva
U.S. Army Research Laboratory

C.A. Zorman, M. Mehregany
Case Western Reserve University

R.F. Davis
North Carolina State University

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

GaN films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstructures and coalesced single crystal layers of GaN have been achieved. SEM and TEM analysis are used to evaluate the morphology of the resulting GaN films. Process routes leading to GaN pendeo-epitaxial growth using silicon substrates have also been achieved and the preliminary results are discussed.

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References Citing this Article

[1] H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra, MRS Internet J. Nitride Semicond. Res. 4, 2 (1999).

[2] Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober, MRS Internet J. Nitride Semicond. Res. 6, 14 (2001).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G4.9 (2000).

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