last updated Saturday, April 3, 1999 2:41:02 AM.
© 1999 The Materials Research Society
X. Li, S.G. Bishop, J.J. Coleman
University of Illinois, Urbana
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The evolution of the topography of GaN stripes as a function of stripe width (2 - 120 µm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G4.8 (1999).
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