MIJ-NSR Vol. 4S1, Art. G4.3, Zhonghai Yu et al.

Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina
North Carolina State University

K.W. Haberern, H.S. Kong, J.A. Edmond
Cree Research Inc.

This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO₂ versus SiN_x insulator stripes was investigated using window/stripe widths ranging from 2 µm/4 µm to 3 µm/15 µm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

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References Citing this Article

[1] J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J.F. Schetzina, J.D. Benson, K.W. Dang, C. Terrill, Thomas Nohava, Wei Yang, Subash Krishnankutty, MRS Internet J. Nitride Semicond. Res. 4, 9 (1999).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G4.3 (1999).

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